MMBTA06 Transistors NPN Datasheet

MMBTA06 Datasheet, PDF, Equivalent


Part Number

MMBTA06

Description

Small Signal Transistors (NPN)

Manufacture

General

Total Page 2 Pages
Datasheet
Download MMBTA06 Datasheet


MMBTA06
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
MMBTA06
Small Signal Transistors (NPN)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
1
Top View
FEATURES
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP
transistor MMBTA56 is recommended.
23
.037(0.95) .037(0.95)
This transistor is also available in the TO-92 case with
the type designation MPSA06.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 1GM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at TA = 25 °C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
1)Device on fiberglass substrate, see layout
2)Device on alumina subtrate
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
RθJA
Tj
TS
VALUE
80
80
4.0
500
255(1)
300(2)
5601)
150
–65 to +150
UNIT
V
V
V
mA
mW
K/W
°C
°C
10/23/98

MMBTA06
MMBTA06
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 100 µA, IC = 0
Collector-Emitter Cutoff Current
VCE = 60 V, IB = 0
Collector-Base Cutoff Current
VCB = 80 V, IE = 0
Collector Saturation Voltage
at IC = 100 mA, IB = 10 mA
Base-Emitter On Voltage
at IC = 10 mA, IB = 1 mA
DC Current Gain
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 100 mA
Gain-Bandwidth Product
at VCE = 2 V, IC = 10 mA, f = 100 MHz
SYMBOL
V(BR)CEO
V(BR)EBO
ICES
ICBO
VCEsat
VBE(on)
hFE
hFE
fT
MIN.
80
4.0
100
100
100
.MAX.
100
100
0.25
1.2
UNIT
V
V
nA
nA
V
V
MHz
0.30 (7.5)
0.12 (3)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
0.06 (1.5)
0.20 (5.1)


Features NEW PRODUCT NEW PRODUCT NEW PRODUCT M MBTA06 Small Signal Transistors (NPN) S OT-23 .122 (3.1) .118 (3.0) .016 (0.4) 1 FEATURES ♦ NPN Silicon Epitaxial P lanar Transistor for switching and ampl ifier applications. ♦ As complementar y type, the PNP transistor MMBTA56 is r ecommended. ♦ This transistor is also available in the TO-92 case with the t ype designation MPSA06. .045 (1.15) .03 7 (0.95) .102 (2.6) .094 (2.4) Top Vie w .056 (1.43) .052 (1.33) 3 max. .004 ( 0.1) 2 .016 (0.4) .016 (0.4) .007 ( 0.175) .005 (0.125) .037(0.95) .037(0. 95) MECHANICAL DATA Case: SOT-23 Plast ic Package Weight: approx. 0.008g Marki ng code: 1GM Dimensions in inches and (millimeters) Pin configuration 1 = Bas e, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature u nless otherwise specified SYMBOL VALU E UNIT Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 °C VCBO VCEO VEBO IC .
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