MMBTA06LT1 Driver Transistors Datasheet

MMBTA06LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA06LT1

Description

Driver Transistors

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBTA06LT1 Datasheet


MMBTA06LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA05LT1/D
Driver Transistors
NPN Silicon
COLLECTOR
3
MMBTA05LT1
MMBTA06LT1*
*Motorola Preferred Device
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol MMBTA05 MMBTA06 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
60 80
60 80
4.0
500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
MMBTA05
MMBTA06
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBTA05
MMBTA06
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
60 —
80 —
4.0 — Vdc
— 0.1 mAdc
mAdc
— 0.1
— 0.1
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBTA06LT1
MMBTA05LT1 MMBTA06LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base – Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
hFE
100 —
100 —
VCE(sat)
0.25 Vdc
VBE(on)
1.2 Vdc
fT 100 — MHz
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA05LT1/D Dr iver Transistors NPN Silicon COLLECTOR 3 1 BASE MMBTA05LT1 MMBTA06LT1* *Motor ola Preferred Device 3 MAXIMUM RATING S Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Cont inuous Symbol VCEO VCBO VEBO IC MMBTA05 60 60 4.0 500 MMBTA06 80 80 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristi c Total Device Dissipation FR– 5 Boar d(1) TA = 25°C Derate above 25°C Ther mal Resistance, Junction to Ambient Tot al Device Dissipation Alumina Substrate ,(2) TA = 25°C Derate above 25°C Ther mal Resistance, Junction to Ambient Jun ction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA T J, Tstg 417 – 55 to +150 Unit mW mW/ C °C/W mW mW/°C °C/W °C DEVICE MA RKING MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min .
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