MMBTA13 Amplifier Transistor Datasheet

MMBTA13 Datasheet, PDF, Equivalent


Part Number

MMBTA13

Description

NPN Darlington Amplifier Transistor

Manufacture

Micro Commercial Components

Total Page 4 Pages
Datasheet
Download MMBTA13 Datasheet


MMBTA13
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBTA13
MMBTA14
Features
Operating And Storage Temperatures –55OC to 150OC
RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”)
Capable of 225mWatts of Power Dissipation
Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V (BR)CEO
V (BR)CBO
Collector-Emitter Breakdown Voltage*
(IC=100uAdc, IB=0)
Collector-Base Breakdown Voltage
30
30
Vdc
Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
10
Vdc
IC Collector Current-Continuous 300 mAdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0)
IEBO Emitter Cutoff Current
(VEB=10Vdc, IC=0)
ON CHARACTERISTICS
100 nAdc
100 nAdc
hFE DC Current Gain*
MMBTA13
MMBTA14
(IC=10mAdc, VCE=5.0Vdc)
5000
10000
MMBTA13
MMBTA14
(IC=150mAdc, VCE=1.0Vdc)
V CE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=0.1mAdc)
V BE(sat)
Base-Emitter Saturation Voltage
(IC=100mAdc,VCE=5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz)
10000
20000
125
1.5
2.0
Vdc
Vdc
MHz
Cobo Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
8.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=30Vdc, VBE=0.5Vdc
tr
Rise Time
IC=150mAdc, IB1=15mAdc)
ts Storage Time (VCC=30Vdc, IC=150mAdc
tf
Fall Time
IB1=IB2=15mAdc)
15 pF
10 ns
25 ns
225 ns
60 ns
NPN Darlington
Amplifier Transistor
SOT-23
A
D
CB
FE
G HJ
K
Collector
Base
Emitter
DIMENSIONS
INCHES
DIM MIN
MAX
MM
MIN
MAX
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45
.60
G
.0005
.0039
.013
.100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com

MMBTA13
MMBTA13
MMBTA14
MCC
500 2.0
BANDWIDTH = 1.0 Hz
RS 0
200
1.0
0.7
BANDWIDTH = 1.0 Hz
0.5
100 IC = 1.0 mA
10 µA
0.3
50 0.2
20
10
5.0
10 20
100 µA
IC = 1.0 mA
0.1
0.07
0.05
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk
f, FREQUENCY (Hz)
50Ăk 100Ăk
0.03
0.02
10
20
100 µA
10 µA
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
100 BANDWIDTH = 10 Hz TO 15.7 kHz
70 IC = 10 µA
50
30 100 µA
20
1.0 mA
10
1.0
2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (k)
Figure 4. Total Wideband Noise Voltage
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
10
10 µA
8.0
100 µA
6.0
4.0 IC = 1.0 mA
2.0
0
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (k)
500 1000
Figure 5. Wideband Noise Figure
www.mccsemi.com


Features MCC Features   omponent s 21201 Itasca Street Chatsworth     !"# $ %    !"# MMBTA13 MMBTA14 • • • Operating And Storage Temperatur es –55OC to 150OC RθJA is 556OC/W (M ounted on FR-5 PCB 1.0”x0.75”x0.062 ”) Capable of 225mWatts of Power Diss ipation Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N NPN Darlington Amplifi er Transistor SOT-23 A D Electrical Ch aracteristics @ 25 C Unless Otherwise S pecified O Symbol Parameter Collector -Emitter Breakdown Voltage* (IC=100uAdc , IB =0) Collector-Base Breakdown Volta ge Em itter-Base Breakdown Voltage Coll ector Current-Continuous Collector Cuto ff Current (VCB =30Vdc, IE =0) Emitter Cutoff Current (VEB =10Vdc, IC=0) DC Cu rrent Gain* (IC=10mAdc, VCE=5.0Vdc) Mi n 30 30 10 300 Max Units Vdc Vdc Vdc mAdc F E OFF CHARACTERISTICS V (BR)CEO V (BR)CBO V (BR)EBO IC ICBO IEBO C B 100 100 nAdc nAdc G K H J Collecto r Base Emitter DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .0.
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