Darlington Transistor. MMBTA13 Datasheet


MMBTA13 Transistor. Datasheet pdf. Equivalent


Part Number

MMBTA13

Description

NPN Darlington Transistor

Manufacture

Fairchild

Total Page 5 Pages
Datasheet
Download MMBTA13 Datasheet


MMBTA13
January 2005
MMBTA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
3
2
SOT-23
1 Mark: 1M
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCES
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
On Characteristics *
IC = 100µA, IB = 0
VCB = 30V, IE = 0
VEB = 10V, IC = 0
hFE
VCE (sat)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE = 5.0V, IC =10mA
VCE = 5.0, IC = 100mA
IC = 100mA, IB = 0.1mA
Min. Max. Units
30 V
100 nA
100 nA
5,000
10,000
1.5
V
VBE (on)
Base-Emitter On Voltage
Small Signal Characteristics
fT Current Gain Bandwidth Product
* Pulse Test: Pulse Width300µs, Duty Cycle2%
IC = 100mA,VCE = 5.0V
IC = 10mA, VCE = 10V, f = 100MHz
125
2.0
V
pF
©2005 Fairchild Semiconductor Corporation
MMBTA13 Rev. B
1
www.fairchildsemi.com

MMBTA13
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
MMBTA13 Rev. B
2 www.fairchildsemi.com


Features MMBTA13 NPN Darlington Transistor Janua ry 2005 MMBTA13 NPN Darlington Transist or • This device is designed for appl ications requiring extremely high Curre nt gain at collector Currents to 1.0A. • Sourced from process 05. • See MP SA14 for characteristics. 3 2 SOT-23 1 Mark: 1M 1. Base 2. Emitter 3. Collec tor Absolute Maximum Ratings Ta = 25° C unless otherwise noted Symbol Param eter VCES VCBO VEBO IC TJ, TSTG Colle ctor-Emitter Voltage Collector-Base Vol tage Emitter-Base Voltage Collector Cur rent - Continuous Operating and Storage Junction Temperature Range Value 30 3 0 10 1.2 -55 to +150 Units V V V A °C Electrical Characteristics Ta=25°C u nless otherwise noted Symbol Paramete r Test Condition Off Characteristics V(BR)CES Collector-Emitter Breakdown V oltage ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current On Chara cteristics * IC = 100µA, IB = 0 VCB = 30V, IE = 0 VEB = 10V, IC = 0 hFE VCE (sat) DC Current Gain Collector-Emitter Saturation Voltage V.
Keywords MMBTA13, datasheet, pdf, Fairchild, NPN, Darlington, Transistor, MBTA13, BTA13, TA13, MMBTA1, MMBTA, MMBT, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)