MMBTA13LT1

www.DataSheet4U.com MMBTA13LT1, MMBTA14LT1 MMBTA14LT1 is a Preferred Device Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1x 556 mW mW/°C °C/W Max Unit COLLECTOR 3 BASE 1 EMITTER 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM 1x M G G 1 = Device Code x = M for MMBTA13LT1 x = N for MMBTA14LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = ...