MMBTA14LT1 Amplifier Transistors Datasheet

MMBTA14LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA14LT1

Description

Darlington Amplifier Transistors

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBTA14LT1 Datasheet


MMBTA14LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA13LT1/D
Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3
BASE
1
MMBTA13LT1
MMBTA14LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
Symbol
VCES
VCBO
VEBO
IC
Value
30
30
10
300
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
EMITTER 2
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CES
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
30 — Vdc
— 100 nAdc
— 100 nAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBTA14LT1
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBTA13
MMBTA14
Symbol
hFE
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base – Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT = |hfe| ftest.
MMBTA13
MMBTA14
VCE(sat)
VBE
fT
Min
5000
10,000
10,000
20,000
125
Max
1.5
2.0
Unit
Vdc
Vdc
MHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA13LT1/D Da rlington Amplifier Transistors NPN Sili con COLLECTOR 3 BASE 1 MMBTA13LT1 MMBT A14LT1* *Motorola Preferred Device EMI TTER 2 3 1 2 MAXIMUM RATINGS Rating C ollector – Emitter Voltage Collector – Base Voltage Emitter – Base Volta ge Collector Current — Continuous Sym bol VCES VCBO VEBO IC Value 30 30 10 30 0 Unit Vdc Vdc Vdc mAdc CASE 318 – 0 8, STYLE 6 SOT– 23 (TO – 236AB) TH ERMAL CHARACTERISTICS Characteristic To tal Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total De vice Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal R esistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 2 25 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tst g 417 – 55 to +150 Unit mW mW/°C °C /W mW mW/°C °C/W °C DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14LT1 = 1N ELECT RICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Uni.
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