MMBTA20LT1 Purpose Amplifier Datasheet

MMBTA20LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA20LT1

Description

General Purpose Amplifier

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBTA20LT1 Datasheet


MMBTA20LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA20LT1/D
General Purpose Amplifier
NPN Silicon
COLLECTOR
3
MMBTA20LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBTA20LT1 = 1C
Symbol
VCEO
VEBO
IC
Value
40
4.0
100
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
40 — Vdc
4.0 — Vdc
— 100 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBTA20LT1
MMBTA20LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
VCE(sat)
40
400 —
0.25 Vdc
Current – Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT 125 — MHz
Cobo — 4.0 pF
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
10 k
275
10 < t1 < 500 µs
DUTY CYCLE = 2%
0
t1
CS < 4.0 pF*
– 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF*
Figure 1. Turn–On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA20LT1/D Ge neral Purpose Amplifier NPN Silicon COL LECTOR 3 1 BASE MMBTA20LT1 3 1 2 EMIT TER 2 MAXIMUM RATINGS Rating Collecto r – Emitter Voltage Emitter – Base Voltage Collector Current — Continuou s Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc CASE 318 – 08, STY LE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total De vice Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resist ance Junction to Ambient Total Device D issipation Alumina Substrate,(2) TA = 2 5°C Derate above 25°C Thermal Resista nce Junction to Ambient Junction and St orage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBTA2 0LT1 = 1C ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise noted) Char acteristic Symbol Min Max Unit OFF CHA RACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter – Base.
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