Document
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
MMBTA42 NPN high-voltage transistor
Product specification 2000 Apr 11
Philips Semiconductors
Product specification
NPN high-voltage transistor
FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. MARKING
1 2
handbook, halfpage
MMBTA42
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
TYPE NUMBER MMBTA42 Note 1. ∗ = p: made in Hong Kong. ∗ = t: made in Malaysia.
MARKING CODE(1) 7D∗
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 300 300 6 100 200 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
2000 Apr 11
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Philips Semiconductors
Product specification
NPN high-voltage transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 200 V IC = 0; VEB = 6 V VCE = 10 V IC = 1 mA IC = 10 mA IC = 30 mA VCEsat VBEsat Cre fT collector-emitter saturation voltage base-emitter saturation voltage feedback capacitance transition frequency IC = 20 mA; IB = 2 mA IC = 20 mA; IB = 2 mA IC = ic = 0; VCB = 20 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz 25 40 40 − − − 50 − − − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
MMBTA42
UNIT K/W
MAX. 100 100
UNIT nA nA
500 900 3 −
mV mV pF MHz
2000 Apr 11
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Philips Semiconductors
Product specification
NPN high-voltage transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
MMBTA42
SOT23
D
B
E
A
X
HE
v M A
3
Q A A1
1
e1 e bp
2
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2000 Apr 11
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Philips Semiconductors
Product specification
NPN high-voltage transistor
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
MMBTA42
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own.