MMBTA42 Voltage Transistor Datasheet

MMBTA42 Datasheet, PDF, Equivalent


Part Number

MMBTA42

Description

NPN Silicon High Voltage Transistor

Manufacture

Micro Commercial Components

Total Page 2 Pages
Datasheet
Download MMBTA42 Datasheet


MMBTA42
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBTA42
Features
Surface Mount SOT-23 Package
Capable of 300mWatts of Power Dissipation
C
Pin Configuration
Top View
1D
NPN Silicon High
Voltage Transistor
BE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0)
Collector Cutoff Current
(VCB=200Vdc, IE=0)
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
300 Vdc
300 Vdc
6.0 Vdc
0.1 uAdc
0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=30mAdc, VCE=10Vdc)
25
40 ----
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc)
0.5 Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=20mAdc, IB=2.0mAdc)
0.9 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
Ccb Collector-Emitter Capacitance
(VCB=20Vdec, IE=0, f=1.0MHz)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
50
3.0
Max
225
1.8
556
300
2.4
417
–55 to +150
MHz
pF
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
*Pulse Width 300µs, Duty Cycle 2.0%
www.mccsemi.com

MMBTA42
MMBTA42
120
100
80
60
40
20
0
0.1
TJ = +125°C
25°C
-55°C
1.0
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
10
MCC
VCE = 10 Vdc
100
100
Ceb @ 1MHz
10
1.0 Ccb @ 1MHz
0.1
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
1.0 10
IC, COLLECTOR CURRENT (mA)
Figure 4. ”ON” Voltages
80
70
60
50
40
30 TJ = 25°C
20
VCE = 20 V
f = 20 MHz
10
1000
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain – Bandwidth
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
100
www.mccsemi.com


Features MCC Features • •    omponents 21201 Itasca Street Chatswort h    !"# $ %    !"# MMBTA42 Surface Mo unt SOT-23 Package Capable of 300mWatts of Power Dissipation C Pin Configurati on Top View NPN Silicon High Voltage T ransistor SOT-23 A D 1D B E Min 300 30 0 6.0 0.1 0.1 Max Units Vdc Vdc Vdc uAd c uAdc G H J F E C B Electrical Charac teristics @ 25°C Unless Otherwise Spec ified Symbol Parameter Collector-Emitte r Breakdown Voltage* (I C=1.0mAdc, IB=0 ) Collector-Base Breakdown Voltage (I C =100µ Adc, IE=0) Emitter-Base Breakdow n Voltage (I E=100µ Adc, IC=0) Collect or Cutoff Current (VCB=200Vdc, IE=0) Em itter Cutoff Current (VEB=6.0Vdc, IC=0) DC Current Gain* (I C=1.0mAdc, VCE=10V dc) (I C=10mAdc, VCE=10Vdc) (I C=30mAdc , VCE=10Vdc) VCE(sat) Collector-Emitter Saturation Voltage (I C=20mAdc, IB=2.0 mAdc) Base-Emitter Saturation Voltage ( I C=20mAdc, IB=2.0mAdc) 25 40 40 OFF C HARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ON CHARACTERISTIC.
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