High-Voltage Transistors. MMBTA42 Datasheet


MMBTA42 Transistors. Datasheet pdf. Equivalent


MMBTA42


NPN Silicon High-Voltage Transistors
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage • Complementary types:
SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

SMBTA42/MMBTA42
32 1

Type SMBTA42/MMBTA42

Marking s1D

Pin Configuration 1=B 2=E 3=C

Package SOT23

Maximum Ratings

Parameter

Symbol

Value

Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipationTS ≤ 74 °C Junction temperature Storage temperature

VCEO VCBO VEBO IC IB Ptot
Tj Tstg

300 300 6 500 100 360
150 -65 ... 150

Thermal Resistance

Parameter Junction - soldering point1)

Symbol RthJS

Value ≤ 210

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit V
mA mW °C
Unit K/W

1 2011-12-19

SMBTA42/MMBTA42

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Collector-emitter br...



MMBTA42
NPN Silicon High-Voltage Transistors
Low collector-emitter saturation voltage
Complementary types:
SMBTA92 / MMBTA92(PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBTA42/MMBTA42
32
1
Type
SMBTA42/MMBTA42
Marking
s1D
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
TS 74 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
300
300
6
500
100
360
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
210
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-12-19

MMBTA42
SMBTA42/MMBTA42
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 300
-
-
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 300
-
-
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO 6 - -
IE = 100 µA, IC = 0
Collector-base cutoff current
VCB = 200 V, IE = 0
VCB = 200 V, IE = 0 , TA = 150 °C
ICBO
- - 0.1
- - 20
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO
- - 100
DC current gain1)
hFE
IC = 1 mA, VCE = 10 V
25 -
-
IC = 10 mA, VCE = 10 V
40 -
-
IC = 30 mA, VCE = 10 V
40 -
-
Collector-emitter saturation voltage1)
VCEsat - - 0.5
IC = 20 mA, IB = 2 mA
Base emitter saturation voltage1)
VBEsat - - 0.9
IC = 20 mA, IB = 2 mA
Unit
V
µA
nA
-
V
AC Characteristics
Transition frequency
IC = 10 MHz, VCE = 20 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
fT
50 70
- MHz
Ccb - - 3 pF
1Pulse test: t < 300µs; D < 2%
2 2011-12-19




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