High Voltage Transistors
COMCHIP
www.comchiptech.com
MMBTA42, MMBTA43
NPN Silicon Type
Features
This device is design...
High Voltage
Transistors
COMCHIP
www.comchiptech.com
MMBTA42, MMBTA43
NPN Silicon Type
Features
This device is designed for application as a video output to drive color CRT and other high voltage applications
SOT-23
.119 (3.0) .110 (2.8) .020 (0.5)
Top View
.056 (1.40) .047 (1.20)
3
2 EMITTER
.020 (0.5)
.020 (0.5)
.103 (2.6) .086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current−Continuous Symbol VCEO VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/°C °C/W mW
2.4 RqJA TJ, Tstg 417 −55 to +150
mW/°C °C/W °C
MDS0605002A
Page 1
.044 (1.10) .035 (0.90)
1 BASE
.006 (0.15) .002 (0.05)
.037(0.95) .037(0.95)
.006 (0.15)max.
COLLECTOR 3
1
2
High Voltage
Transistors
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC =...