MMBTA42LT1 Voltage Transistors Datasheet

MMBTA42LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA42LT1

Description

High Voltage Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBTA42LT1 Datasheet


MMBTA42LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA42LT1/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBTA42LT1*
MMBTA43LT1
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
MMBTA42 MMBTA43
300 200
300 200
6.0 6.0
500
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
417
–55 to +150
°C/W
°C
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
MMBTA42
300 —
MMBTA43
200 —
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
MMBTA42
300 —
MMBTA43
200 —
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
MMBTA42
MMBTA43
MMBTA42
MMBTA43
V(BR)EBO
ICBO
IEBO
6.0
— Vdc
µAdc
0.1
0.1
µAdc
0.1
0.1
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MMBTA42LT1
MMBTA42LT1 MMBTA43LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
hFE —
Both Types
25 —
Both Types
40 —
(IC = 30 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBTA42
MMBTA43
MMBTA42
MMBTA43
VCE(sat)
VBE(sat)
40
40
MMBTA42
MMBTA43
fT 50
Ccb
Vdc
0.5
0.5
0.9 Vdc
— MHz
pF
3.0
4.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA42LT1/D Hi gh Voltage Transistors NPN Silicon COLL ECTOR 3 1 BASE 2 EMITTER Symbol VCEO VC BO VEBO IC MMBTA42 300 300 6.0 500 MMBT A43 200 200 6.0 Unit Vdc Vdc Vdc mAdc MMBTA42LT1* MMBTA43LT1 *Motorola Prefer red Device 3 1 2 MAXIMUM RATINGS Rati ng Collector – Emitter Voltage Collec tor – Base Voltage Emitter – Base V oltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (T O – 236AB) DEVICE MARKING MMBTA42LT1 = 1D; MMBTA43LT1 = M1E THERMAL CHARAC TERISTICS Characteristic Total Device D issipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissip ation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storag e Temperature Symbol PD Max 225 1.8 RqJ A PD 556 300 2.4 RqJA TJ, Tstg 417 –5 5 to +150 Unit mW mW/°C °C/W mW mW/° C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic .
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