MMBTA42LT1

MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current−Continuous Symbol VCEO VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/°C °C/W mW 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W °C MARKING DIAGRAMS 1D X M1E X MMBTA42LT1 MMBTA43LT1 1D, M1E = Specific Device Code X = Date Code ORDERING INFORMATION Device MMBTA42LT1 MMBTA42LT1G MMBTA43LT1 MMBTA43LT3 Package SOT−23 SOT−23 SOT−23 SOT−23 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for fut...