Voltage Amplifier. MMBTA43 Datasheet


MMBTA43 Amplifier. Datasheet pdf. Equivalent


Part Number

MMBTA43

Description

NPN High Voltage Amplifier

Manufacture

Fairchild

Total Page 3 Pages
Datasheet
Download MMBTA43 Datasheet


MMBTA43
Discrete POWER & Signal
Technologies
MPSA43
MMBTA43
C
C
BE
TO-92
SOT-23
Mark: 1E
E
B
NPN High Voltage Amplifier
This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48. See MPSA42 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
200
6.0
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSA43
625
5.0
83.3
*MMBTA43
350
2.8
200 357
Units
mW
mW /°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation

MMBTA43
NPN High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 160 V, IE = 0
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
200
200
6.0
0.1
0.1
V
V
V
µA
µA
25
40
50 200
0.4
0.9
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Ccb Collector-Base Capacitance
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 20 V, IE = 0, f = 1.0 MHz
50
MHz
4.0 pF


Features MPSA43 / MMBTA43 Discrete POWER & Signa l Technologies MPSA43 MMBTA43 C E C B TO-92 E SOT-23 Mark: 1E B NPN Hig h Voltage Amplifier This device is desi gned for application as a video output to drive color CRT and other high volta ge applications. Sourced from Process 4 8. See MPSA42 for characteristics. Abs olute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Vol tage Collector-Base Voltage Emitter-Bas e Voltage Collector Current - Continuou s TA = 25°C unless otherwise noted P arameter Value 200 200 6.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *T hese ratings are limiting values above which the serviceability of any semicon ductor device may be impaired. NOTES: 1 ) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The f actory should be consulted on applicati ons involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25.
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