MMBTA43 Voltage Transistors Datasheet

MMBTA43 Datasheet, PDF, Equivalent


Part Number

MMBTA43

Description

High Voltage Transistors

Manufacture

Comchip Technology

Total Page 3 Pages
Datasheet
Download MMBTA43 Datasheet


MMBTA43
High Voltage Transistors
MMBTA42, MMBTA43
NPN Silicon Type
Features
This device is designed for application as a
video output to drive color CRT and other
high voltage applications
COMCHIP
www.comchiptech.com
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
COLLECTOR
3
1
BASE
2
EMITTER
12
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Symbol MMBTA42 MMBTA43 Unit
Collector −Emitter Voltage
VCEO
Collector −Base Voltage
VCBO
Emitter −Base Voltage
VEBO
Collector Current−Continuous
IC
THERMAL CHARACTERISTICS
300 200
300 200
6.0 6.0
500
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MDS0605002A
Page 1

MMBTA43
High Voltage Transistors
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA42
MMBTA43
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBTA42
MMBTA43
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
MMBTA42
MMBTA43
MMBTA42
MMBTA43
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
Both Types
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
Collector −Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MMBTA42
MMBTA43
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA42
MMBTA43
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
300
200
300
200
6.0
hFE
VCE(sat)
VBE(sat)
25
40
40
40
fT 50
Ccb
Max Unit
Vdc
Vdc
− Vdc
mAdc
0.1
0.1
mAdc
0.1
0.1
Vdc
0.5
0.5
0.9 Vdc
− MHz
pF
3.0
4.0
MDS0605002A
Page 2


Features High Voltage Transistors COMCHIP www.co mchiptech.com MMBTA42, MMBTA43 NPN Sil icon Type Features This device is desi gned for application as a video output to drive color CRT and other high volta ge applications SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dim ensions in inches (millimeters) MAXIMU M RATINGS Rating Collector −Emitter V oltage Collector −Base Voltage Emitte r −Base Voltage Collector Current−C ontinuous Symbol VCEO VCBO VEBO IC MMBT A42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACT ERISTICS Characteristic Total Device Di ssipation FR−5 Board (Note 1) TA = 25 °C Derate above 25°C Thermal Resistan ce, Junction−to−Ambient Total Devic e Dissipation Alumina Substrate (Note 2 ) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Ju nction and Storage Temperature 1. FR− 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD .
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