Purpose Amplifier. MMBTA55 Datasheet


MMBTA55 Amplifier. Datasheet pdf. Equivalent


MMBTA55


PNP General Purpose Amplifier
MMBTA55 — PNP General-Purpose Amplifier

MMBTA55 PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73.

March 2014

C

E

SOT-23
Mark: 2H

B

Ordering Information
Part Number MMBTA55

Marking 2H

Package SOT-23 3L

Packing Method Tape and Reel

Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol
VCEO VCBO VEBO
IC TJ , TSTG

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Junction and Storage Te...



MMBTA55
MMBTA55
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 73.
March 2014
C
E
SOT-23
Mark: 2H
B
Ordering Information
Part Number
MMBTA55
Marking
2H
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ , TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction and Storage Temperature Range
Value
-60
-60
-4
-500
-55 to +150
Unit
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBTA55 Rev. 1.1.0
1
www.fairchildsemi.com

MMBTA55
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJA
Total Device Dissipation
Derate Above TA = 25°C
Thermal Resistance, Junction to Ambient
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Max.
350
2.8
357
Unit
mW
mW/°C
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
Parameter
Collector-Emitter Breakdown
Voltage(4)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation
Voltage
Base-Emitter On Voltage
fT Current Gain - Bandwidth Product
Conditions
IC = -1.0 mA, IB = 0
IC = -100 μA, IE = 0
IE = -100 μA, IC = 0
VCE = -60 V, IB = 0
VCB = -60 V, IE = 0
IC = -10 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V
IC = -100 mA, IB = -10 mA
IC = -100 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V,
f = 100 MHz
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min.
-60
-60
-4.0
100
100
50
Max.
-0.1
-0.1
Unit
V
V
V
μA
μA
-0.25
-1.2
V
V
MHz
©1997 Fairchild Semiconductor Corporation
MMBTA55 Rev. 1.1.0
2
www.fairchildsemi.com




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