Transistors MMBTA55LT1 Datasheet

MMBTA55LT1 Datasheet, Driver Transistors


Part Number

MMBTA55LT1

Description

Driver Transistors

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBTA55LT1 Datasheet


MMBTA55LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA55LT1/D
Driver Transistors
PNP Silicon
COLLECTOR
3
1
BASE
MMBTA55LT1
MMBTA56LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
2
EMITTER
MMBTA55 MMBTA56
–60 –80
–60 –80
–4.0
–500
Unit
Vdc
Vdc
Vdc
mAdc
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
417
–55 to +150
°C/W
°C
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)
Collector Cutoff Current (VCE = –60 Vdc, IB = 0)
Collector Cutoff Current (VCB = –60 Vdc, IE = 0)
Collector Cutoff Current (VCB = –80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V(BR)CEO –60 — Vdc
–80 —
V(BR)EBO –4.0 — Vdc
ICES
— –0.1 µAdc
ICBO
— –0.1 µAdc
— –0.1
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc)
DC Current Gain (IC = –100 mAdc, VCE = –1.0 Vdc)
hFE 100
100
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc)
VCE(sat)
VBE(on)
–0.25
–1.2
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4)
(IC = –100 mAdc, VCE = –1.0 Vdc, f = 100 MHz)
fT 50 — MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MMBTA55LT1
MMBTA55LT1 MMBTA56LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA55LT1/D Dr iver Transistors PNP Silicon 1 BASE CO LLECTOR 3 MMBTA55LT1 MMBTA56LT1* *Moto rola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Co llector – Base Voltage Emitter – Ba se Voltage Collector Current — Contin uous Symbol VCEO VCBO VEBO IC MMBTA55 60 –60 –4.0 –500 MMBTA56 –80 –80 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBT A55LT1 = 2H; MMBTA56LT1 = 2GM THERMAL CHARACTERISTICS Characteristic Total De vice Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resist ance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resist ance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1 .8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Sy mbol 417 –55 to +150 Unit mW mW/°C C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic.
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