MMBTA56 Transistors PNP Datasheet

MMBTA56 Datasheet, PDF, Equivalent


Part Number

MMBTA56

Description

Small Signal Transistors (PNP)

Manufacture

General

Total Page 2 Pages
Datasheet
Download MMBTA56 Datasheet


MMBTA56
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
MMBTA56
Small Signal Transistors (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
1
Top View
23
FEATURES
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN
transistor MMBTA06 is recommended.
This transistor is also available in the
TO-92 case with the type designation MPSA56.
.037(0.95) .037(0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code
2GM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at TA = 25 °C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
1) Device on fiberglass subtrate, see layout
2)Device on alumina substrate.
SYMBOL
–VCBO
–VCEO
–VEBO
–IC
Ptot
RθJA
Tj
TS
VALUE
80
80
4.0
500
225(1)
300(2)
560(1)
150
– 55 to +150
UNIT
V
V
V
mA
mW
K/W
°C
°C
10/13/98

MMBTA56
MMBTA56
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Collector-Emitter Breakdown Voltage
at -IC = 1 mA, IB = 0 mA
Emitter-Base Breakdown Voltage
at IE = 100 mA, IC = 0
Collector-Emitter Cutoff Current
-VCE = 60 V, -IB = 0
Collector-Base Cutoff Current
-VCB = 80 V, IE = 0
Collector Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base-Emitter On Voltage
at -IC = 100 mA, -IB = 10 mA
at -IC = 50 mA, -IB = 5 mA
DC Current Gain
at VCE = 1 V, -IC = 10 mA
at VCE = 1 V, -IC = 100 mA
Gain-Bandwidth Product
at VCE = 1 V, IC = 100 mA, f = 100 MHz
SYMBOL
-VBR(CEO)
-V(BR)EBO
-ICES
-ICBO
-VCEsat
-VBE(on)
-VBE(on)
hFE
hFE
fT
MIN.
80
4.0
100
100
50
.MAX.
100
100
0.25
1.2
1.2
UNIT
V
V
nA
nA
V
V
V
MHz
0.30 (7.5)
0.12 (3)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
0.06 (1.5)
0.20 (5.1)


Features NEW PRODUCT NEW PRODUCT NEW PRODUCT M MBTA56 Small Signal Transistors (PNP) S OT-23 .122 (3.1) .118 (3.0) .016 (0.4) 1 FEATURES ♦ PNP Silicon Epitaxial P lanar Transistor for switching and ampl ifier applications. Top View .056 (1.4 3) .052 (1.33) ♦ As complementary ty pe, the NPN transistor MMBTA06 is recom mended. ♦ This transistor is also ava ilable in the TO-92 case with the type designation MPSA56. 2 3 max. .004 (0. 1) .007 (0.175) .005 (0.125) .037(0.9 5) .037(0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) .045 (1.15) .037 (0.95) MECHANICAL DATA Dimensions in inches and (millimeters) Pin configura tion 1 = Base, 2 = Emitter, 3 = Collect or. Case: SOT-23 Plastic Package Weigh t: approx. 0.008g Marking code 2GM MAX IMUM RATINGS AND ELECTRICAL CHARACTERIS TICS Ratings at 25°C ambient temperatu re unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Vol tage Collector Current Power Dissipation at TA = 25 °C –VCBO –VCEO –V.
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