MMBTA63LT1 TransistorsPNP Silicon Datasheet

MMBTA63LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA63LT1

Description

Darlington Transistors(PNP Silicon)

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBTA63LT1 Datasheet


MMBTA63LT1
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MMBTA63LT1,
MMBTA64LT1
MMBTA64LT1 is a Preferred Device
Darlington Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCES
VCBO
VEBO
IC
−30
−30
−10
−500
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
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BASE
1
COLLECTOR 3
EMITTER 2
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2x M G
G
1
2x = Device Code
x = U for MMBTA63LT1
x = V for MMBTA64LT1
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBTA63LT1
SOT−23 3,000 / Tape & Reel
MMBTA63LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBTA64LT1
SOT−23 3,000 / Tape & Reel
MMBTA64LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBTA63LT1/D

MMBTA63LT1
MMBTA63LT1, MMBTA64LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −100 mAdc)
Collector Cutoff Current
(VCB = −30 Vdc)
Emitter Cutoff Current
(VEB = −10 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −100 mAdc, IB = −0.1 mAdc)
Base − Emitter On Voltage
(IC = −100 mAdc, VCE = −5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBTA63
MMBTA64
MMBTA63
MMBTA64
Symbol
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Min Max
−30 −
− −100
− −100
5,000
10,000
10,000
20,000
−1.5
−2.0
125 −
Unit
Vdc
nAdc
nAdc
Vdc
Vdc
MHz
http://onsemi.com
2


Features www.DataSheet4U.com MMBTA63LT1, MMBTA64 LT1 MMBTA64LT1 is a Preferred Device D arlington Transistors PNP Silicon Featu res http://onsemi.com COLLECTOR 3 BASE 1 EMITTER 2 3 1 2 Symbol PD 225 1.8 RqJ A PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C = Device Code x = U for MMBTA63LT1 x = V for MMBTA64 LT1 M = Date Code* G = Pb−Free Packag e (Note: Microdot may be in either loca tion) *Date Code orientation and/or ove rbar may vary depending upon manufactur ing location. 2x 1 2x M G G 556 mW mW/ C °C/W Max Unit SOT−23 (TO−236) C ASE 318 STYLE 6 • Pb−Free Packages are Available MAXIMUM RATINGS Rating C ollector −Emitter Voltage Collector Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value −30 −30 10 −500 Unit Vdc Vdc Vdc mAdc THERM AL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Therm al Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C De.
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