MMBTA64 Darlington Transistor Datasheet

MMBTA64 Datasheet, PDF, Equivalent


Part Number

MMBTA64

Description

PNP Darlington Transistor

Manufacture

Fairchild

Total Page 3 Pages
Datasheet
Download MMBTA64 Datasheet


MMBTA64
Discrete POWER & Signal
Technologies
MPSA64
MMBTA64
PZTA64
C
BE
TO-92
C
SOT-23
Mark: 2V
E
B
C
SOT-223
C
B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
30
30
VEBO
Emitter-Base Voltage
10
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA64
*MMBTA64
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
625 350
5.0 2.8
83.3
RθJA Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA64
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
A64, Rev A

MMBTA64
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
IC = 100 µA, IB = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
30 V
100 nA
100 nA
10,000
20,000
1.5
2.0
V
V
125 MHz
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
50
VCE = 5V
40
30 125 °C
20
25 °C
10 - 40 °C
0
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
- 40 ºC
0.8
0.4
25 °C
125 ºC
0
0.001
0.01 0.1
I C - COLLECTOR CURRENT (A)
1


Features MPSA64 / MMBTA64 / PZTA64 Discrete POWE R & Signal Technologies MPSA64 MMBTA6 4 C PZTA64 C E C B E C B TO-92 E S OT-23 Mark: 2V B SOT-223 PNP Darling ton Transistor This device is designed for applications requiring extremely hi gh current gain at currents to 800 mA. Sourced from Process 61. Absolute Maxi mum Ratings* Symbol VCES VCBO VEBO IC T J, Tstg Collector-Emitter Voltage Colle ctor-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25 °C unless otherwise noted Parameter Value 30 30 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junct ion Temperature Range *These ratings a re limiting values above which the serv iceability of any semiconductor device may be impaired. NOTES: 1) These rating s are based on a maximum junction tempe rature of 150 degrees C. 2) These are s teady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. T hermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless othe.
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