MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA63LT1/D
Darlington Transistors
PNP Silicon
COLLECTO...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA63LT1/D
Darlington
Transistors
PNP Silicon
COLLECTOR 3 BASE 1
MMBTA63LT1 MMBTA64LT1*
*Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCES VCBO VEBO IC Value –30 –30 –10 –500 Unit Vdc Vdc Vdc mAdc
1 2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Characteristic Symbol 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc) Collector Cutoff Current (VCB = –30 Vdc) Emitter Cutoff Current (VEB = –10 Vdc) V(BR)CEO ICBO IEBO hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 VCE(sat) VBE(on) fT 5,000 10,000 10,000 20,000 — — — — — — –1.5 –2.0 Vdc Vdc –30 — — — –100 –100 Vdc nAdc nAdc
ON CHARACTERISTICS
DC Current Gain(3) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) —
Collector ...