MMBTA64LT1 Darlington Transistors Datasheet

MMBTA64LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA64LT1

Description

Darlington Transistors

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBTA64LT1 Datasheet


MMBTA64LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA63LT1/D
Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE
1
MMBTA63LT1
MMBTA64LT1*
*Motorola Preferred Device
EMITTER 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCES
VCBO
VEBO
IC
–30
–30
–10
–500
Vdc
Vdc
Vdc
mAdc
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc)
Collector Cutoff Current (VCB = –30 Vdc)
Emitter Cutoff Current (VEB = –10 Vdc)
ON CHARACTERISTICS
DC Current Gain(3)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
MMBTA63
MMBTA64
MMBTA63
MMBTA64
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
Min
Max
Unit
V(BR)CEO
ICBO
IEBO
–30
–100
–100
hFE
VCE(sat)
VBE(on)
5,000
10,000
10,000
20,000
–1.5
–2.0
fT 125 —
Vdc
nAdc
nAdc
Vdc
Vdc
MHz
1

MMBTA64LT1
MMBTA63LT1 MMBTA64LT1
200
TA = 125°C
100
70
50
30 25°C
20
10
7.0
5.0
3.0
2.0
–0.3
–55°C
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE = –2.0 V
–5.0 V
–30 –50 –70 –100
–10 V
–200 –300
–2.0
TA = 25°C
–1.6
VBE(sat) @ IC/IB = 100
–1.2
VBE(on) @ VCE = –5.0 V
–0.8 VCE(sat) @ IC/IB = 1000
IC/IB = 100
–0.4
0
–0.3 –0.5 –1.0
–2 –3 –5 –10 –20 –30 –50 –100 –200 –300
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
–2.0
TA = 25°C
–1.8
–1.6
IC = –10 mA –50 mA –100 mA –175 mA
–1.4
–300 mA
–1.2
–1.0
–0.8
–0.6
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K
IB, BASE CURRENT (µA)
Figure 3. Collector Saturation Region
10
VCE = –5.0 V
4.0 f = 100 MHz
3.0 TA = 25°C
2.0
1.0
0.4
0.2
0.1
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500 –1K
Figure 4. High Frequency Current Gain
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA63LT1/D Da rlington Transistors PNP Silicon COLLEC TOR 3 BASE 1 MMBTA63LT1 MMBTA64LT1* *M otorola Preferred Device EMITTER 2 3 MAXIMUM RATINGS Rating Collector – Em itter Voltage Collector – Base Voltag e Emitter – Base Voltage Collector Cu rrent — Continuous Symbol VCES VCBO V EBO IC Value –30 –30 –10 –500 U nit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) D EVICE MARKING MMBTA63LT1 = 2U; MMBTA64L T1 = 2V THERMAL CHARACTERISTICS Charac teristic Total Device Dissipation FR– 5 Board,(1) TA = 25°C Derate above 25 C Thermal Resistance, Junction to Ambi ent Total Device Dissipation Alumina Su bstrate,(2) TA = 25°C Derate above 25 C Thermal Resistance, Junction to Ambi ent Junction and Storage Temperature Sy mbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Characteristic Symbol 41 7 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Min Max Unit OFF.
Keywords MMBTA64LT1, datasheet, pdf, Motorola, Darlington, Transistors, MBTA64LT1, BTA64LT1, TA64LT1, MMBTA64LT, MMBTA64L, MMBTA64, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)