MMBTA65 Darlington Transistor Datasheet

MMBTA65 Datasheet, PDF, Equivalent


Part Number

MMBTA65

Description

PNP Darlington Transistor

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBTA65 Datasheet


MMBTA65
Discrete POWER & Signal
Technologies
MPSA65
MMBTA65
PZTA65
C
BE
TO-92
C
SOT-23
Mark: 2W
E
B
C
SOT-223
C
B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
30
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
30
10
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
MPSA65
625
5.0
83.3
200
Max
*MMBTA65
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA65
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
A65, Rev A

MMBTA65
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V (B R )C E S
ICBO
IEBO
Collector-Emitter Breakdown
Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
IC = 100 µA, IB = 0
VCB = 30 V, IE = 0
VEB = 8.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
30 V
100 nA
100 nA
50,000
20,000
1.5
2.0
V
V
100 MHz


Features MPSA65 / MMBTA65 / PZTA65 Discrete POWE R & Signal Technologies MPSA65 MMBTA6 5 C PZTA65 C E C B E C B TO-92 E S OT-23 Mark: 2W B SOT-223 PNP Darling ton Transistor This device is designed for applications requiring extremely hi gh current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Rat ings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Ba se Voltage Emitter-Base Voltage Collect or Current - Continuous TA = 25°C unl ess otherwise noted Parameter Value 3 0 30 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Tem perature Range *These ratings are limi ting values above which the serviceabil ity of any semiconductor device may be impaired. NOTES: 1) These ratings are b ased on a maximum junction temperature of 150 degrees C. 2) These are steady s tate limits. The factory should be cons ulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD .
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