Purpose Transistor. MMBTA70LT1 Datasheet


MMBTA70LT1 Transistor. Datasheet pdf. Equivalent


MMBTA70LT1


General Purpose Transistor
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBTA70LT1/D

General Purpose Transistor
PNP Silicon
1 BASE

COLLECTOR 3

MMBTA70LT1

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –40 –4.0 –100

2 EMITTER
1

3

Unit Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

DEVICE MARKING
MMBTA70LT1 = M2C

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg Symbol 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICBO –40 –4.0 — — — –100 Vdc Vdc nAdc

ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE VCE(sat) 40 — 400 –0.25 — Vdc

SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –5.0 mAd...



MMBTA70LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA70LT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
MMBTA70LT1
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VEBO
IC
–40
–4.0
–100
Vdc
Vdc
mAdc
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
RθJA
TJ, Tstg
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Min Max
–40 —
–4.0 —
— –100
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
Vdc
nAdc
40 400
— –0.25
Vdc
125 —
— 4.0
MHz
pF
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBTA70LT1
MMBTA70LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = –ā5.0 Vdc, TA = 25°C)
10
7.0
5.0
3.0
2.0 1.0 mA
IC = 10 µA
30 µA
100 µA
300 µA
BANDWIDTH = 1.0 Hz
RS 0
1.0
10 20
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
300 µA
100 µA
30 µA
10 µA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = –ā5.0 Vdc, TA = 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
10 Hz to 15.7 kHz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
+ ƪ ) ) ƫ ńNoise Figure is Defined as:
NF
20 log10 en2
4KTRS In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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