MMBTA92 high-voltage transistor Datasheet

MMBTA92 Datasheet, PDF, Equivalent


Part Number

MMBTA92

Description

PNP high-voltage transistor

Manufacture

Philipss

Total Page 8 Pages
Datasheet
Download MMBTA92 Datasheet


MMBTA92
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
MMBTA92
PNP high-voltage transistor
Product specification
2000 Apr 11

MMBTA92
Philips Semiconductors
PNP high-voltage transistor
Product specification
MMBTA92
FEATURES
Low current (max. 100 mA)
High voltage (max. 300 V).
APPLICATIONS
Telephony
Professional communication equipment.
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: MMBTA42.
MARKING
TYPE NUMBER
MMBTA92
MARKING CODE(1)
7E
Note
1. = p: made in Hong Kong.
= t: made in Malaysia.
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
300
300
5
100
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2000 Apr 11
2


Features DISCRETE SEMICONDUCTORS DATA SHEET k, h alfpage M3D088 MMBTA92 PNP high-volta ge transistor Product specification 20 00 Apr 11 Philips Semiconductors Prod uct specification PNP high-voltage tr ansistor FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Profess ional communication equipment. DESCRIPT ION PNP high-voltage transistor in a SO T23 plastic package. NPN complement: MM BTA42. MARKING TYPE NUMBER MMBTA92 Note 1. ∗ = p: made in Hong Kong. ∗ = t : made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Ra ting System (IEC 60134). SYMBOL VCBO VC EO VEBO IC ICM IBM Ptot Tstg Tj Tamb No te 1. Transistor mounted on an FR4 prin ted-circuit board. PARAMETER collector- base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base c urrent total power dissipation storage temperature junction temperature operat ing ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base .
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