MMBTA92 Voltage Transistor Datasheet

MMBTA92 Datasheet, PDF, Equivalent


Part Number

MMBTA92

Description

PNP Silicon High Voltage Transistor

Manufacture

Infineon Technologies AG

Total Page 7 Pages
Datasheet
Download MMBTA92 Datasheet


MMBTA92
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types:
SMBTA42 / MMBT42 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBTA92/MMBTA92
32
1
Type
SMBTA92/MMBTA92
Marking
s2D
Pin Configuration
1=B 2=E 3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
TS 74 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
300
300
5
500
100
360
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
210
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-12-19

MMBTA92
SMBTA92/MMBTA92
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 300
-
-
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 300
-
-
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO 5 - -
IE = 100 µA, IC = 0
Collector-base cutoff current
VCB = 200 V, IE = 0
VCB = 200 V, IE = 0 , TA = 150 °C
ICBO
- - 0.1
- - 20
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO
- - 100
DC current gain1)
hFE
IC = 1 mA, VCE = 10 V
25 -
-
IC = 10 mA, VCE = 10 V
40 -
-
IC = 30 mA, VCE = 10 V
25 -
-
Collector-emitter saturation voltage1)
VCEsat - - 0.5
IC = 20 mA, IB = 2 mA
Base emitter saturation voltage1)
VBEsat - - 0.9
IC = 20 mA, IB = 2 mA
Unit
V
µA
nA
-
V
AC Characteristics
Transition frequency
IC = 20 MHz, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
fT
50 -
- MHz
Ccb - - 6 pF
1Pulse test: t < 300µs; D < 2%
2 2011-12-19


Features PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collecto r-emitter saturation voltage • Comple mentary types: SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBTA92/ MMBTA92 32 1 Type SMBTA92/MMBTA92 Mar king s2D Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Param eter Symbol Value Collector-emitter voltage Collector-base voltage Emitter- base voltage Collector current Base cur rent Total power dissipationTS ≤ 74 C Junction temperature Storage tempera ture VCEO VCBO VEBO IC IB Ptot Tj Tstg 300 300 5 500 100 360 150 -65 ... 150 Thermal Resistance Parameter Junctio n - soldering point1) Symbol RthJS Va lue ≤ 210 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-12-19 SMB TA92/MMBTA92 Electrical Characteristics at TA = 25°C, unless .
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