MMBTA92LT1 Voltage Transistors Datasheet

MMBTA92LT1 Datasheet, PDF, Equivalent


Part Number

MMBTA92LT1

Description

High Voltage Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBTA92LT1 Datasheet


MMBTA92LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA92LT1/D
High Voltage Transistors
PNP Silicon
COLLECTOR
3
1
BASE
MMBTA92LT1*
MMBTA93LT1
*Motorola Preferred Device
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol MMBTA92 MMBTA93 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
–300
–200
–300
–200
–5.0 –5.0
–500
Vdc
Vdc
Vdc
mAdc
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
MMBTA92
MMBTA93
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MMBTA92
MMBTA93
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
(VCB = –160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
MMBTA92
MMBTA93
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
–300
–200
–300
–200
–5.0
ICBO
IEBO
–0.25
–0.25
–0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MMBTA92LT1
MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
hFE —
Both Types
25 —
Both Types
40 —
(IC = –30 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBTA92
MMBTA93
MMBTA92
MMBTA93
VCE(sat)
VBE(sat)
25
25
Vdc
–0.5
–0.5
–0.9 Vdc
MMBTA92
MMBTA93
fT 50
Ccb
— MHz
pF
6.0
8.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA92LT1/D Hi gh Voltage Transistors PNP Silicon 1 BA SE COLLECTOR 3 MMBTA92LT1* MMBTA93LT1 *Motorola Preferred Device 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Collecto r – Emitter Voltage Collector – Bas e Voltage Emitter – Base Voltage Coll ector Current — Continuous Symbol VCE O VCBO VEBO IC MMBTA92 –300 –300 5.0 –500 MMBTA93 –200 –200 –5. 0 Unit Vdc Vdc Vdc mAdc CASE 318 – 0 8, STYLE 6 SOT– 23 (TO – 236AB) DE VICE MARKING MMBTA92LT1 = 2D; MMBTA93LT 1 = 2E THERMAL CHARACTERISTICS Charact eristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25° C Thermal Resistance, Junction to Ambie nt Total Device Dissipation Alumina Sub strate,(2) TA = 25°C Derate above 25° C Thermal Resistance, Junction to Ambie nt Junction and Storage Temperature Sym bol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Charact.
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