MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA92LT1/D
High Voltage Transistors
PNP Silicon
1 BASE...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA92LT1/D
High Voltage
Transistors
PNP Silicon
1 BASE
COLLECTOR 3
MMBTA92LT1* MMBTA93LT1
*Motorola Preferred Device
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA92 –300 –300 –5.0 –500 MMBTA93 –200 –200 –5.0 Unit Vdc Vdc Vdc mAdc
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) (VCB = –160 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Therm...