MMBTH10 RF Transistor Datasheet

MMBTH10 Datasheet, PDF, Equivalent


Part Number

MMBTH10

Description

NPN RF Transistor

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBTH10 Datasheet


MMBTH10
Discrete POWER & Signal
Technologies
MPSH10
MMBTH10
C
C
EB
TO-92
SOT-23
Mark: 3E
E
B
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH10
350
2.8
125
357
*MMBTH10
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation

MMBTH10
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN RF Transistor
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 2.0 V, IC = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 4.0 mA, VCE = 10 V
IC = 4.0 mA, IB = 0.4 mA
IC = 4.0 mA, VCE = 10 V
SMALL SIGNAL CHARACTERISTICS
fT
Ccb
Crb
rb’Cc
Current Gain - Bandwidth Product
Collector-Base Capacitance
Common-Base Feedback Capacitance
Collector Base Time Constant
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
25
30
3.0
60
650
0.35
100
100
0.5
0.95
0.7
0.65
9.0
V
V
V
nA
nA
V
V
MHz
pF
pF
pS
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)


Features MPSH10 / MMBTH10 Discrete POWER & Signa l Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, wi th collector currents in the 100 µA to 20 mA range in common emitter or commo n base mode of operations, and in low f requency drift, high output UHF oscilla tors. Sourced from Process 42. Absolut e Maximum Ratings* Symbol VCEO VCBO VEB O IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vo ltage Collector Current - Continuous T A = 25°C unless otherwise noted Param eter Value 25 30 3.0 50 -55 to +150 U nits V V V mA °C Operating and Storag e Junction Temperature Range *These ra tings are limiting values above which t he serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junctio n temperature of 150 degrees C. 2) Thes e are steady state limits. The factory should be consulted on applications involving pulsed or low duty c.
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