MMBTH10-4LT1

MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon Device Marking: 3EM Device Marking: Features http://onsemi.com Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 300 2.4 RθJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit 1 2 CASE 318 SOT−23 STYLE 6 ORDERING INFORMATION Device MMBTH10LT1 MMBTH10LT1G MMBTH10−4LT1 Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev. 2 Publication Order Number: MMBTH10LT1/D MMBTH10L...