VHF/UHF Transistor. MMBTH10LT1 Datasheet


MMBTH10LT1 Transistor. Datasheet pdf. Equivalent


MMBTH10LT1


VHF/UHF Transistor
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBTH10LT1/D

VHF/UHF Transistor

MMBTH10LT1
COLLECTOR 3 1 BASE
3
Motorola Preferred Device

NPN Silicon

2 EMITTER

1 2

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc

DEVICE MARKING
MMBTH10LT1 = 3EM

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit

Thermal Clad is a regi...



MMBTH10LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTH10LT1/D
VHF/UHF Transistor
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MMBTH10LT1
Motorola Preferred Device
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
DEVICE MARKING
VCEO
VCBO
VEBO
25
30
3.0
Vdc
Vdc
Vdc
MMBTH10LT1 = 3EM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
RθJA
TJ, Tstg
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector Cutoff Current (VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
25
30
3.0
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 100 nAdc
— 100 nAdc
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll97Signal Transistors, FETs and Diodes Device Data
1

MMBTH10LT1
MMBTH10LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc)
Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE
60
———
— 0.5 Vdc
— 0.95 Vdc
Current–Gain – Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common–Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
fT
Ccb
Crb
rbCc
650
— — MHz
— 0.7 pF
— 0.65 pF
— 9.0 ps
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
100
70
60
50
40
30
20
10
0
– 10
– 20
– 30
100
COMMON–BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yib, INPUT ADMITTANCE
0
gib – 10
– 20
– bib 1000 MHz
– 30
– 40 700
– 50 400 200 100
200 300 400 500 700
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
– 60
1000 0
10 20 30 40 50 60 70 80
gib (mmhos)
Figure 2. Polar Form
yfb, FORWARD TRANSFER ADMITTANCE
bfb
– gfb
60
200 400
50
100
40
600
700
30
1000 MHz
20
10
200 300 400 500 700
1000
70 60 50 40 30 20 10 0 – 10 – 20 – 30
f, FREQUENCY (MHz)
gfb (mmhos)
Figure 3. Rectangular Form
Figure 4. Polar Form
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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