VHF/UHF Transistor. MMBTH10LT1 Datasheet


MMBTH10LT1 Transistor. Datasheet pdf. Equivalent


Part Number

MMBTH10LT1

Description

VHF/UHF Transistor

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBTH10LT1 Datasheet


MMBTH10LT1
MMBTH10LT1,
MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
Device Marking: 3EM
Device Marking:
Features
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
Characteristic
Symbol
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1)
RθJA
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
−55 to
+150
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
CASE 318
SOT−23
STYLE 6
ORDERING INFORMATION
Device
Package
Shipping
MMBTH10LT1
MMBTH10LT1G
MMBTH10−4LT1
SOT−23
SOT−23
(Pb−Free)
SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
MMBTH10LT1/D

MMBTH10LT1
MMBTH10LT1, MMBTH10−4LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
25
30
3.0
− Vdc
− Vdc
− Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
ICBO
IEBO
− 100 nAdc
− 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
hFE −
MMBTH10LT1
60 −
MMBTH10−4LT1
120 − 240
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
Base−Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VCE(sat)
VBE
− 0.5 Vdc
− 0.95 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
MMBTH10LT1
MMBTH10−4LT1
fT
650 −
800 −
MHz
Collector−Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common−Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
Ccb
Crb
rbCc
− 0.7 pF
− 0.65 pF
− 9.0 ps
http://onsemi.com
2


Features MMBTH10LT1, MMBTH10−4LT1 Preferred Dev ices VHF/UHF Transistor NPN Silicon Device Marking: 3EM Device Marking: F eatures http://onsemi.com • Pb−Fre e Package May be Available. The G−Suf fix Denotes a Pb−Free Lead Finish 1 B ASE COLLECTOR 3 MAXIMUM RATINGS Ratin g Collector-Emitter Voltage Collector-B ase Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vd c Vdc Vdc 3 2 EMITTER THERMAL CHARACT ERISTICS Characteristic Total Device Di ssipation FR−5 Board (Note 1) TA = 25 °C Derate above 25°C Thermal Resistan ce, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (N ote 2) TA = 25°C Derate above 25°C Th ermal Resistance, Junction to Ambient ( Note 2) Junction and Storage Temperatur e Range Symbol PD 225 1.8 RθJA PD 300 2.4 RθJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W M ax Unit 1 2 CASE 318 SOT−23 STYLE 6 ORDERING INFORMATION Device MMBTH10LT1 MMBTH10LT1G MMBTH10−4LT1 Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping† 3000/Tape & Reel .
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