MMBTH69LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTH69LT1/D UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 1 BASE 2 EMITTER Motorola Preferred Device PNP Silicon Designed for UHF/VHF Amplifier Applications High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA 3 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value –15 –15 –4.0 Unit Vdc Vdc Vdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTH69LT1 = M3J THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO –15 –15 –4.0 — — — — — — — — –100 Vdc Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = –10 mAdc, VCE = –10 Vdc) hFE 30 — 300 — SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (...