MMBV3102LT1

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency controland tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio MMBV3102LT1 22 pF(Nominal) 30Volts VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 30 200 225 1.8 +125 –55 to +150 Unit Vdc mAdc mW mW/°C °C °C DEVICE MARKING MMBV3102LT1= M4C ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (VR=15Vdc) Diode Capacitance Temperature Coeffici...