MMBV3401LT1

LESHAN RADIO COMPANY, LTD. Silicon Pin Diode This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. Rugged Pin Structure Coupled with Wirebond Construction for Optimum Reliability Low Capacitance—0.7pF Typ at VR=20Vdc Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc MMBV3401LT1 SILICON PIN SWITCHING DIODE 3 3 CATHODE 1 ANODE 1 2 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Symbol Value Reverse Voltage Forward power Dissipation @T A = 25°C Derate above 25°C VR PD 20 200 2.0 Junction Temperature Storage Temperature Range DEVICE MARKING T J +125 T stg –55 to +150 MMBV3401LT1=4D ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol Min Reverse Breakdown Voltage (IR=10µAdc) Diode Capacitance (VR=20 Vdc) Series Resistance(figure5) (IF=10mAdc,f=100MHz) Reverse V...