MMDF3N06HD

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N06HD/D Advance Information Medium Power Surface Mount Products MMDF3N06HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided DUAL TMOS POWER MOSFET 60 VOLTS RDS(on) = 100 mW ™ D G S D CASE 751–05, Style 11 SO–8 Source–1 Gate–1 Source–2 G S Gate–2 1 2 3 4 8 7 6 5 Drain–1 Drain–1 Drain–2 Drain–2 Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continu...