MMFT108T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT108T1/D Field Effect Transistor N–Channel Enhancement–Mode Logic Level SOT–223 ® 2, 4 DRAIN MMFT108T1 TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 3 SOURCE 1 2 3 4 CASE 318E–04, STYLE 3 SOT–223 (TO–261AA) MAXIMUM RATINGS Rating Drain – to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID PD 0.8 6.4 TJ, Tstg – 65 to +150 Watts mW/°C °C Value 200 ±20 250 Unit Volts Volts mAdc DEVICE MARKING MT108 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (1) Maximum Temperature for Soldering Purposes Maximum Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended foot print. TMOS is a registered trademark of Motorola, Inc. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMFT108T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) Gate–Body Leakage Current — Reverse (VGS = 15 Vdc, VDS = 0) V(BR)DSS 200 IDSS — IGSS — — 10 — 30 nAdc — — nAdc Vdc ON CHARACTERISTICS (2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain–to–Source On–Resistance (VGS = 2....