MMFT2406T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2406T1/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds High Voltage — 240 Vdc Low Drive Requirement The SOT–223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use MMFT2406T1 to order the 7 inch/1000 unit reel. Use MMFT2406T3 to order the 13 inch/4000 unit reel. D MMFT2406T1 Motorola Preferred Device MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS(on) = 6.0 OHM ® 4 1 2 3 G S CASE 318E–04, STYLE 3 TO–261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 240 ± 20 700 1.5 12 – 65 to 150 Unit Vdc Vdc mAdc Watts mW/°C °C DEVICE MARKING T2406 THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted)(1) Lead Temperature for Soldering Purpo...