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MMFT5P03HD

Motorola

MEDIUM POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT5P03HD/D Designer's ™ Data Sheet Medium Power Surf...


Motorola

MMFT5P03HD

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT5P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMFT5P03HD Motorola Preferred Device TMOS P-Channel Field Effect Transistor MMFT5P03HD is an advanced power MOSFET which utilizes Motorola’s High Cell Density HDTMOS process. This miniature surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SOT–223 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Sp...




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