MMPQ2222

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMPQ2222/D Quad General Purpose Transistors NPN Silicon 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 MMPQ2222 MMPQ2222A* *Motorola Preferred Device 16 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 0.52 4.2 PD 0.8 6.4 TJ, Tstg 2.4 19.2 –55 to +150 1.0 8.0 MMPQ2222 30 60 5.0 500 Four Transistors Equal Power Watts mW/°C Watts mW/°C °C MMPQ2222A 40 75 Unit Vdc Vdc Vdc mAdc 1 CASE 751B–05, STYLE 4 SO–16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2222 MMPQ2222A IEBO MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — — — — — 50 10 100 nAdc 30 40 60 75 5.0 — — — — — — — — — — — — — Vdc Vdc Vdc nAdc v 300 ms; Duty Cycle v 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended...