MMPQ6700

MMPQ6700 MMPQ6700 E2 B1 E3 B2 B4 E4 B3 E1 SOIC-16 C1 C3 C2 C2 C1 C4 C C3 4 TRANSIST OR TRANSISTOR C1 B1 C3 B3 E1 & E3 & C2 B2 E2 C4 B4 E4 TYPE NPN PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to 100 mA. These devices are best used when space is the primary consideration. Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 40 40 5.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die Max MMPQ6700 1000 8.0 125 240 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MMPQ6700 Quad NPN & PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 2...