MMSD103T1

MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 Cathode 2 Anode http://onsemi.com THERMAL CHARACTERISTICS Characteristic Forward Power Dissipation, FR–5 Board (Note 1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range 1. FR–5 = 1.0  0.75  0.062 in. Symbol PF Value 400 3.2 174 492 125 Max –55 to +150 Unit mW mW/°C °C/W °C/W °C °C 1 CASE 425–04, STYLE 1 SOD–123 JS = Specific Device Code MARKING DIAGRAM 2 JS RθJL RθJA TJ Tstg ORDERING INFORMATION Device MMSD103T1 Package SOD–123 Shipping 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) IR — — V(BR) VF — — CD trr — — 1000 1250 5.0 50 pF ns 250 1.0 100 — Vdc mV µAdc © Semiconductor Components Industries, LLC, 2001 1 August, 2000 – Rev. 0 Publication Order Number: MMSD103T1/D MMSD103T1 820 Ω +10 V 2.0 k 100 µH 0.1 µF D.U.T. 90%...