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MMSD701T1 Dataheets PDF



Part Number MMSD701T1
Manufacturers Motorola
Logo Motorola
Description SOD-123 Schottky Barrier Diodes
Datasheet MMSD701T1 DatasheetMMSD701T1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSD301T1/D SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage 1 Cathode 2 Anode MMSD301T1 MMSD701T1 Motorola.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSD301T1/D SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage 1 Cathode 2 Anode MMSD301T1 MMSD701T1 Motorola Preferred Devices 2 1 CASE 425–04, STYLE 1 SOD–123 MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range MMSD301T1 MMSD701T1 Symbol VR PF TJ Tstg Value 30 70 225 – 55 to +125 – 55 to +150 Unit Vdc mW °C °C DEVICE MARKING MMSD301T1 = XT, MMSD701T1 = XH ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 IR MMSD301T1 MMSD701T1 VF MMSD301T1 MMSD701T1 — — — — 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 — — 13 9.0 200 200 nAdc nAdc Vdc — — 0.9 0.5 1.5 1.0 — — 0.9 0.5 1.5 1.0 pF Symbol V(BR)R 30 70 — — — — pF Min Typ Max Unit Volts Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. replaces MMSD101T1/D Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MMSD301T1 MMSD701T1 TYPICAL CHARACTERISTICS MMSD301T1 2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) MMSD301T1 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 MMSD301T1 1.0 TA = 100°C TA = 75°C 0.1 TA = 25°C 100 MMSD301T1 IF, FORWARD CURRENT (mA) TA = – 40°C 10 TA = 85°C IR, REVERSE LEAKAGE ( m A) 1.0 TA = 25°C 0.01 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 3. Reverse Leakage Figure 4. Forward Voltage 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMSD301T1 MMSD701T1 TYPICAL CHARACTERISTICS MMSD701T1 2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MMSD701T1 MMSD701T1 400 KRAKAUER METHOD 300 1.2 t , MINORITY CARRIER LIFETIME (ps) 0.8 200 0.4 100 0 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100 Figure 5. Total Capacitance Figure 6. Minority Carrier Lifetime 10 MMSD701T1 1.0 TA = 100°C TA = 75°C 0.1 100 MMSD701T1 IF, FORWAR.


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