Document
MMST4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction • Complementary PNP Type Available (MMST4403) • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323 • Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). • Marking Information: K3X - See Page 4 • Ordering & Date Code Information: See Page 4 • Weight: 0.006 grams (approximate)
A C
BC
BE G H
K
J
DE
L
C
BE
SOT-323 Dim Min Max
A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 M G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α 0° 8° All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
VCBO VCEO VEBO
IC Pd RθJA Tj, TSTG
60 40 6.0 600 200 625 -55 to +150
V V V mA mW °C/W °C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30084 Rev. 9 - 2
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MMST4401
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol Min
V(BR)CBO V(BR)CEO V(BR)EBO
ICEX IBL
60 40 6.0 ⎯ ⎯
20 40 hFE 80 100 40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Current Gain-Bandwith Product
SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
5. Short duration pulse test used to minimize self-heating effect.
VCE(SAT) VBE(SAT)
⎯
0.75 ⎯
Cob ⎯ Ceb ⎯ hie 1.0 hre 0.1 hfe 40 hoe 1.0
fT 250
td ⎯ tr ⎯ ts ⎯ tr ⎯
Max Unit
Test Condition
⎯ V IC = 100μA, IE = 0 ⎯ V IC = 1.0mA, IB = 0 ⎯ V IE = 100μA, IC = 0 100 nA VCE = 35V, VEB(OFF) = 0.4V 100 nA VCE = 35V, VEB(OFF) = 0.4V
⎯ ⎯ ⎯ 300 ⎯
0.40 0.75
0.95 1.2
IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V ⎯ IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V
V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
8.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
15 kΩ 8.0 x 10-4 VCE = 10V, IC = 1.0mA, 500 ⎯ f = 1.0MHz
30 μS
⎯
MHz VCE = 10V, IC = 20mA, f = 100MHz
15 ns VCC = 30V, IC = 150mA, 20 ns VBE(OFF) = 2.0V, IB1 = 15mA
225 ns VCC = 30V, IC = 150mA, 30 ns IB1 = IB2 = 15mA
PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN
400 350
300
250
200
150
100
50
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1,000 100
TA = 125°C
10
1 0.1
1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs
Collector Current
1,000
DS30084 Rev. 9 - 2
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CAPACITANCE (pF)
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
30
20
Cibo
10
5.0
1.0 0.1
1.0 10
REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance
0.5
IC = 10 IB
0.4
TA = 25°C
0.3
TA = 150°C
0.2
50
0.1
TA = -50°C
0 1 10 100 1,000
IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
1,000
VCE = 5V
100
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0
1.8 IC = 1mA 1.6 1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001 0.01
0.1
1
10 100
IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
1.0
0.9 VCE = 5V 0.8
TA = -50°C
0.7 TA = 25°C 0.6
0.5
TA = 150°C
0.4
0.3
0.2 0.1
1
10 100
IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
10
1 1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current
DS30084 Rev. 9 - 2
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MMST4401
© Diodes Incorporated
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