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MMST4401 Dataheets PDF



Part Number MMST4401
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Datasheet MMST4401 DatasheetMMST4401 Datasheet (PDF)

MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMST4403) • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • "Green" Device (Note 3 and 4) Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal .

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MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMST4403) • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • "Green" Device (Note 3 and 4) Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Marking Information: K3X - See Page 4 • Ordering & Date Code Information: See Page 4 • Weight: 0.006 grams (approximate) A C BC BE G H K J DE L C BE SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 M G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α 0° 8° All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range VCBO VCEO VEBO IC Pd RθJA Tj, TSTG 60 40 6.0 600 200 625 -55 to +150 V V V mA mW °C/W °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30084 Rev. 9 - 2 1 of 4 www.diodes.com MMST4401 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ 20 40 hFE 80 100 40 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwith Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 5. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) ⎯ 0.75 ⎯ Cob ⎯ Ceb ⎯ hie 1.0 hre 0.1 hfe 40 hoe 1.0 fT 250 td ⎯ tr ⎯ ts ⎯ tr ⎯ Max Unit Test Condition ⎯ V IC = 100μA, IE = 0 ⎯ V IC = 1.0mA, IB = 0 ⎯ V IE = 100μA, IC = 0 100 nA VCE = 35V, VEB(OFF) = 0.4V 100 nA VCE = 35V, VEB(OFF) = 0.4V ⎯ ⎯ ⎯ 300 ⎯ 0.40 0.75 0.95 1.2 IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V ⎯ IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 8.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 15 kΩ 8.0 x 10-4 VCE = 10V, IC = 1.0mA, 500 ⎯ f = 1.0MHz 30 μS ⎯ MHz VCE = 10V, IC = 20mA, f = 100MHz 15 ns VCC = 30V, IC = 150mA, 20 ns VBE(OFF) = 2.0V, IB1 = 15mA 225 ns VCC = 30V, IC = 150mA, 30 ns IB1 = IB2 = 15mA PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1,000 100 TA = 125°C 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 1,000 DS30084 Rev. 9 - 2 2 of 4 www.diodes.com MMST4401 © Diodes Incorporated CAPACITANCE (pF) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 30 20 Cibo 10 5.0 1.0 0.1 1.0 10 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance 0.5 IC = 10 IB 0.4 TA = 25°C 0.3 TA = 150°C 0.2 50 0.1 TA = -50°C 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1,000 VCE = 5V 100 VBE(ON), BASE EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 IC = 1mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1.0 0.9 VCE = 5V 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30084 Rev. 9 - 2 3 of 4 www.diodes.com MMST4401 © Diodes Incorporated Orderi.


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