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MMUN2113LT1 Dataheets PDF



Part Number MMUN2113LT1
Manufacturers Motorola
Logo Motorola
Description PNP SILICON BIAS RESISTOR TRANSISTOR
Datasheet MMUN2113LT1 DatasheetMMUN2113LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMUN2111LT1/D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these in.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMUN2111LT1/D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of PIN 1 damage to the die. BASE • Available in 8 mm embossed tape and reel. Use the (INPUT) Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Symbol VCBO VCEO IC PD R1 R2 PIN 3 COLLECTOR (OUTPUT) MMUN2111LT1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 PIN 2 EMITTER (GROUND) CASE 318-08, STYLE 6 SOT-23 (TO-236AB) Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/°C THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RθJA TJ, Tstg TL Value 625 – 65 to +150 260 10 Unit °C/W °C °C Sec DEVICE MARKING AND RESISTOR VALUES Device MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1(2) Marking A6A A6B A6C A6D A6E R1 (K) 10 22 47 10 10 R2 (K) 10 22 47 47 ∞ 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MMUN2111T1/D) Motorola Small–Signal © Motorola, Inc. 1996 Transistors, FETs and Diodes Device Data 1 MMUN2111LT1 SERIES DEVICE MARKING AND RESISTOR VALUES (Continued) Device MMUN2116LT1(2) MMUN2130LT1(2) MMUN2131LT1(2) MMUN2132LT1(2) MMUN2133LT1(2) MMUN2134LT1(2) Marking A6F A6G A6H A6J A6K A6L R1 (K) 4.7 1.0 2.2 4.7 4.7 22 R2 (K) ∞ 1.0 2.2 4.7 47 47 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 — — nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 — 60 100 140 140 250 250 5.0 15 27 140 130 — — — — — — — — — — — — 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 VCE(sat) VOL — — — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) 2. New devices. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMUN2111LT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Symbol VOH Min 4.9 Typ — Max — Unit .


MMUN2113 MMUN2113LT1 MMUN2113LT1


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