MXP1158

2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP 1158 Phototransistor Optocoupler Features 2,500 Volt electrical isolation Standard 8-pin DIP package High current transfer ratio for low IF Screening similar to JANTX, JANTXV or JANS equivalent NC 2 5 3 6 Description The MXP1158 consists of a light emitting diode and an NPN phototransistor. The device is available in a hermetic 8-pin DIP package. Electrical Characteristics @ 25oC SYMBOL IC(on) VCEsat BVceo BVebo ICE(off) VF IR tR tF CHARCTERISTIC On-State Collector Current Saturation Voltage Breakdown Voltage Breakdown Voltage Off-State Leakage Current Input Forward Voltage Input Reverse Current Rise Time Fall Time CONDITIONS IF = 1 mA, VCE = 5 Volts IF = 2 mA, IC = 1.0 mA IC = 1.0 mA Ieb = 100 uA VC = 20 Volts IF = 10 mA VR = 2.0 V VCC = 10 Volts, RL = 100 Ohms IF = 5 mA Min 1.0 40 7 100 1.0 100.0 20 20 Max 8.0 0.3 UNITS mAmps Volts Volts Volts nAmps Volts uAmps usec usec Absolute Maximum Ratings 8 7 6 5 LED Input Diode Reverse Voltage Forward Voltage Peak Forward Current Power Dissipation Input to Output Isolation Storage Temperature Range Operating Temperature Range 2.0 Vdc minimum @ IR = 10 uA 1.95 Vdc maximum @ IF = 100 mA 1.0 Amp @ 1 msec pulse width 200 mW +/- 2,500 Vdc -65 C to +150 C -55 C to +125 C 1 2 3 4 Data Sheet # MSC1334.PDF Updated: September 1999 Opto Products ...