InGaAs/InP PIN Photodiode Chips
PRELIMINARY
MXP4000 Series
OPTO ELECTRONIC PRODUCTS
InGaAs/InP PIN Photodiode Chips
P RODUCT P REVIEW
DESCRIPTION
KE...
Description
PRELIMINARY
MXP4000 Series
OPTO ELECTRONIC PRODUCTS
InGaAs/InP PIN Photodiode Chips
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi . COM
Microsemi’s InGaAs/InP PIN Photodiode chips are ideal for wide bandwidth 1310nm and 1550nm optical networking applications. The four devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 156 Mb/sec (active area of 300um2), 622 Mb/sec (active area of 200 um2), 2.5 Gb/sec (active area of 75 um2), 10 Gb/sec (active area of 40 um2),
The MXP4000 series of photodiodes are originally offered in die form for manufacturers of optical transponders, supervisory VCSEL monitoring circuits, and combination PIN Photodiode-transimpedance amplifier hybrids.
!" Low Dark Current !" Extremely low capacitance !" Wide bandwidth !" Fast response time APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS !" 1310nm Fiber Optic Applications !" 1550nm Fiber Optic Applications !" Optical Transponders
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Item Active Area(Dia.) Photo Sensitive Area Detection Range Responsivity Responsivity Dark Current Capacitance Rise/Fall Time Bandwidth Breakdown Voltage Chip Size Bonding Pad Size
Sym
PART RATINGS AND CHARACTERISTICS MXP4000 MXP4001 MXP4002 MXP4003 300 200 75 40
Unit µm
Test Condition —
Res Res ID C tr/tf VB
0.9 0.9 10 5.0 2 ns 0.156 20 0.020 x 0.020 100
0.85 0.9 4 2 0.5 ns 0.622 20 ...
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