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SQ918F Dataheets PDF



Part Number SQ918F
Manufacturers Semicoa Semiconductor
Logo Semicoa Semiconductor
Description Chip Type 2C918 Geometry 0013 Polarity NPN
Datasheet SQ918F DatasheetSQ918F Datasheet (PDF)

Data Sheet No. 2C918 Chip Type 2C918 Geometry 0013 Polarity NPN Generic Packaged Parts: 2N918 Chip type 2C918 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N918, 2N918UB, SD918, SD918F, SQ918, SQ918F Product Summary: APPLICATIONS: Designed for high frequency oscillator, multiplier and driver applications. Features: • High frequency rating Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitte.

  SQ918F   SQ918F


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Data Sheet No. 2C918 Chip Type 2C918 Geometry 0013 Polarity NPN Generic Packaged Parts: 2N918 Chip type 2C918 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N918, 2N918UB, SD918, SD918F, SQ918, SQ918F Product Summary: APPLICATIONS: Designed for high frequency oscillator, multiplier and driver applications. Features: • High frequency rating Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO BVEBO ICBO hFE Test conditions IC = 3.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 15 V, IE = 0 IC = 3.0 mA dc, VCE = 1.0 V Min 15 30 3.0 --20 Max ------10 --- Unit V dc V dc V dc nA --- VCE(sat) IC = 30 mA dc, IB = 3.0 mA --0.3 V dc Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%. .


SQ918 SQ918F SQD200A40


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