SRC1211M

Semiconductor SRC1211M NPN Silicon Transistor Descriptions Switching application Interface circuit and driver circuit application Features With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRC1211M Marking 1211 Package Code T0-92M Outline Dimensions 4.0±0.1 unit : mm Equivalent Circuit 3.0±0.1 C(OUT) 0.44 REF 0.52 REF B(IN) 14.0±0.40 14.0±0.40 R1 R1 = 10KΩ E(COMMON) 1.27 Typ. 2.54 ± 0.1. 1 2 3 0.7 Typ. 3.0±0.1 3.8 Min. 0.42 Typ. PIN Connections 1. Emitter 2. Collector 3. Base KSR-I008-000 1 SRC1211M (Ta=25°C) Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings 50 50 5 100 400 150 -55 ~ 150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25°C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA - Min. Typ. Max. 120 0.1 250 10 500 500 0.3 - Unit nA nA V MHz KΩ R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-I008-000 2 ...