SRC1212S

Semiconductor SRC1212S NPN Silicon Transistor Descriptions Switching application Interface circuit and driver circuit application Features With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRC1212S Marking RCB Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm Equivalent Circuit C(OUT) 1 1.90 Typ. 3 2 2.9±0.1 B(IN) R1 R1 = 100KΩ 0.4 Typ. 0.45~0.60 E(COMMON) 0.2 Min. 1.12 Max. 0.38 0~0.1 0.124 -0.03 +0.05 PIN Connections 1. Base 2. Emitter 3. Collector KSR-2040-000 1 SRC1212S Absolute maximum ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PD TJ TSTG Ratings 50 50 5 100 200 150 -55 ~ 150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance (Ta=25°C) Symbol ICBO IEBO hFE VCE(SAT) fT * Test Condition VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA - Min. Typ. Max. 120 0.1 250 100 500 500 0.3 - Unit nA nA V MHz KΩ R1 * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-2040-000 2 ...