NMT2222

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A PN2222A MMBT2222A C PZT2222A C E C B E C B TO-92 E SOT-23 Mark: 1P B SOT-223 MMPQ2222 E2 B2 E3 B3 E4 B4 NMT2222 C2 E1 C1 E1 B1 SOIC-16 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 Mark: .1B B1 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 75 6.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  1997 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Cu...